A,Jun,2013 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD601A TRANSISTOR (NPN) FEATURE High hFE Low VCE(sat) For general amplification Complementary to 2SB709A MAXIMUM RATINGS (T a=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 7 V I